Plasma-Enhanced Chemical Vapour Deposition (PECVD) System

We want to acquire a Plasma-Enhanced Chemical Vapour Deposition (PECVD) system. Your proposed System should be able to deposit thin films of silicon oxide, silicon nitride, combinations of both (silicon oxynitride) and also amorphous silicon.

Your proposed System will be located in a class 10000 cleanroom space and will be operated by students and technical staff. Your proposed System should integrate smoothly with the existing facilities without any prejudice for the normal operation of the space.

We envisage two main purposes for your proposed System: the deposition of dielectric cladding and mask layers for the fabrication of silicon photonic circuits based on SOI technology and the deposition of amorphous silicon films to be used as the guiding layer for photonic circuits. Your proposed System should excel at uniformity in film thickness and film composition not only over the surface of the samples (typically SOI wafers or pieces between 1cm in area and 6 inches in diameter) but also between consecutive processes on different samples. The metrics used to evaluate the performance will be uniformity, reproducibility, consistent film composition, low stress and low defect density both on accuracy and degree of control.